Manual Properties of Lattice-Matched and Strained Indium Gallium Arsenide (E M I S Datareviews Series)

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Properties of Lattice-matched and Strained Indium Gallium Arsenide Volume 8 of Electronic Materials Information Service: EMIS datareviews series.
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Indium gallium arsenide

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Browse All Figures Return to Figure. Py, M.

IM, P. Fazan, M. Dutoit, C. Martin, M. Achtnich, G. Burri, M. Parker ed.

Plenum, New York, , p. Ilegems Applications of selectively-doped two-dimensional electron layers, Helv. Acta 58, P. Bhattacharya, H. Staehli Impurity and defect level characterization of Be-doped GaAs grown by molecular beam epitaxy, J. Tsang, R. Logan, M. Ilegems High power fundamental transverse mode strip buried heterostructure lasers wih linear light-current characteristics, Appl. Ilegems, B. Schwartz, L. Koszi, R. Miller Integrated multi-junction GaAs photodetector with high output voltage, Appl. Tsang, M.

Ilegems Be doping and diffusion in molecular beam epitaxy of GaAs and Al. Van der Ziel, M. Jordan, M. Ilegems Solid-liquid equilibria for quaternary solid solutions in the regular solution approximation J. Solids 36, M.


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Ilegems, R. Dingle Acceptor incorporation in GaAs grown by molecular beam epitaxy, Proc. Dingle, L. Casey, S. Somekh, M. Ilegems Room temperature operation of low threshold separate-confinement heterostructure injection laser with distributed feedback, Appl.

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Optics, 14, M. Ilegems, M. Solids 35, M. Ilegems, H. Montgomery Electrical properties of n-type vapor grown GaN, J. Chem Solids 34, A. Barker, M. Ilegems Infrared lattice vibrations and free electron dispersion in GaN, Phys. B7, M.

Ilegems Vapor epitaxy of GaN, J. Dingle, R. Panish, M. Inaccordance with the position of the constituent group III atoms in the periodic table, a moreaccurate description and formula is GaInAs. However, InGaAs is more often used at thepresent time and this nomenclature has been retained. Finally, I would like to thank John L. Seal's, Managing Editor of the EMIS series, for his support and patience and the authors andreviewers for their contributions. Published on Dec View Download Inquiries concerningreproduction outside those terms should be sent to thepublishers at the undermentioned address: Institution of Electrical EngineersMichael Faraday House,Six Hills Way, Stevenage,Herts.

SG1 2AY, United Kingdom While the editor and the publishers believe that theinformation and guidance given in this work is correct, allparties must rely upon their own skill and judgment whenmaking use of it.

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Narrow-Gap Semiconductor Materials

From this point on, the publications on the growth, properties and devices made with GaxIn1 xAs grew almost exponentially with time. Craig Casey Jr. It isbefitting, therefore, to dedicate a volume of the EMIS series to these materials and heterostructures. Adachi Dr A. Adams Professor I. Adesida Dr S. Alterovitz Professor P. Bhattacharya Dr D.

Bimberg Dr N. Chand Dr Y. Chen Dr DJ. Dunstan Dr M. Dutta Dr N. Dutta Professor L. Fawcett Dr E.

Fitzgerald Professor M. Ilegems Dr R.

Properties of Lattice-Matched and Strained Indium Gallium Arsenide (E M I S DATAREVIEWS SERIES)

Karlicek Jr. Kim Dr P. Kordos Professor M. Littlejohn Professor S. Mahajan Dr M.

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Marso Dr M. Matsuura Professor R. Merlin Dr J. Microhardness and brittleness of solid solutions in the indium arsenide-gallium arsenide system Documents.